march 2011 doc id 18270 rev 1 1/7 7 tpdvxx40 40 a high voltage triacs features on-state current (i t(rms) ): 40 a max. blocking voltage (v drm /v rrm ): 1200 v gate current (i gt ): 200 ma commutation @ 10 v/s: up to 142 a/ms noise immunity: 500 v/s insulated package: ? 2,500 v rms (ul recognized: e81734). description the tpdvxx40 series use a high performance alternistor technology. featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) top3 insulated a2 a1 g a2 a1 g table 1. device summary parameter tpdv640rg tpdv840rg TPDV1240RG blocking voltage v drm /v rrm 600 v 800 v 1200 v on-state current i t(rms) 40 a gate current i gt 200 ma www.st.com
characteristics tpdvxx40 2/7 doc id 18270 rev 1 1 characteristics table 2. absolute ratings (limiting values) symbol parameter value unit i t(rms) on-state rms current (180 conduction angle) t c = 75 c 40 a i tsm non repetitive surge peak on-state current t p = 2.5 ms t j = 25 c 590 a t p = 8.3 ms 370 t p = 10 ms 350 i 2 ti 2 t value for fusing t p = 10 ms t j = 25 c 610 a 2 s di/dt critical rate of rise of on-state current i g = 500 ma , di g /dt = 1 a/s repetitive f = 50 hz 20 a/s non repetitive 100 v drm v rrm repetitive peak off-state voltage tpdv640 t j = 125 c 600 v tpdv840 800 tpdv1240 1200 t stg t j storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c t l maximum lead temperature for soldering during 10s at 2mm from case 260 c v ins(rms) (1) insulation rms voltage 2500 v 1. a1, a2, gate terminals to case for 1 minute table 3. electrical characteristics (t j = 25 c, unless otherwise specified) symbol test conditions quadrant value unit i gt v d = 12 v dc, r l = 33 i - ii - iii max. 200 ma v gt max. 1.5 v v gd v d = v drm r l = 3.3 k t j = 125 c i - ii - iii min. 0.2 v t gt v d = v drm i g = 500 ma di g /dt = 3 a/s i - ii - iii typ. 2.5 s i h (1) i t = 500 ma gate open max. 50 ma i l i g = 1.2 x i gt i - iii typ. 100 ma ii 200 dv/dt linear slope up to: v d = 67 % v drm gate open t j = 125 c min. 500 v/s v tm (1) i tm = 35 a t p = 380 s max. 1.8 v i drm i rrm v drm = v rrm t j = 25 c max. 20 a t j = 125 c 8 ma (di/dt)c (1) (dv/dt)c = 200 v/s t j = 125 c min. 35 a/ms (dv/dt)c = 10 v/s 142 1. for either polarity of electrode a 2 voltage with reference to electrode a 1 .
tpdvxx40 characteristics doc id 18270 rev 1 3/7 table 4. gate characteristics (maximum values) symbol parameter value unit p g(av) average gate power dissipation 1 w p gm peak gate power dissipation t p = 20 s 40 w i gm peak gate current t p = 20 s 8 a v gm peak positive gate voltage t p = 20 s 16 v table 5. thermal resistance symbol parameter value unit r th(j-a) junction to ambient 50 c/w r th(j-c) dc junction to case for dc 1.2 c/w r th(j-c) ac junction to case for 360 conduction angle (f = 50 hz) 0.9 c/w figure 1. max. rms power dissipation versus on-state rms current (f = 50 hz). (curves limited by (di/dt)c) figure 2. max. rms power dissipation and max. allowable temperatures (t amb and t case ) for various r th p(w) i (a) t(rms) = 180 = 120 = 90 40 50 60 30 20 10 0 0 5 10 15 20 25 30 35 40 = 30 = 60 180 t (c) amb 0 20 40 60 80 100 120 140 125 85 75 95 115 105 p(w) t (c) case 40 50 60 30 20 10 0 r = 0.75c/w th r = 0.5c/w th r = 0.25c/w th r = 0c/w th figure 3. on-state rms current versus case temperature figure 4. relative variation of thermal impedance versus pulse duration i (a) t(rms) 30 40 50 20 10 0 025 75 50 100 125 t (c) case = 180 k=[z /r th(j-c) th(j-c) ] t (s) p z th(j-c) z th(j-a) 1.00 0.10 0.01 0.0 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3
characteristics tpdvxx40 4/7 doc id 18270 rev 1 figure 9. safe operating area below curve figure 5. relative variation of gate trigger current and holding current versus junction temperature figure 6. non repetitive surge peak on-state current versus number of cycles i,i,i[t] / gt h l j i ,i ,i [t =25c] gt h l j t (c) j i gt i h & i l 2.5 2 1.5 1 0.5 0 -20 -30 -40 0 10 -10 20 40 30 50 60 70 80 90 100 110 120 130 i (a) tsm 200 250 300 350 150 100 50 0 1 10 100 1000 t =10ms p one cycle number of cycles t initial=25c j figure 7. non-repetitive surge peak on-state current for a sinusoidal pulse and corresponding values of i 2 t figure 8. on-state characteristics (maximum values) i (a), i t (a s) tsm 22 100 10000 1000 1 2 510 t (ms) p i t 2 i tsm t initial = 25c j i (a) tm 1000 100 10 1 123456 v (v) tm v =1.02v r =12m t max.: j t0 d t j =max t =25c j (dv/dt)c(v/s) 1000 100 10 1 (di/dt)c(a/ms) t initial = 25c j 1 100 1000
tpdvxx40 package information doc id 18270 rev 1 5/7 2 package information epoxy meets ul94,v0 cooling method: c (by conduction) recommended torque value: 0.9 to 1.2 nm in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. table 6. top3 insulated dimensions ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 1.45 1.55 0.057 0.061 c 14.35 15.60 0.565 0.614 d 0.5 0.7 0.020 0.028 e 2.7 2.9 0.106 0.114 f 15.8 16.5 0.622 0.650 g 20.4 21.1 0.815 0.831 h 15.1 15.5 0.594 0.610 j 5.4 5.65 0.213 0.222 k 3.4 3.65 0.134 0.144 ?l 4.08 4.17 0.161 0.164 p 1.20 1.40 0.047 0.055 r 4.60 typ. 0.181 typ. r h k g f e d b a c jj p ?l
ordering information tpdvxx40 6/7 doc id 18270 rev 1 3 ordering information 4 revision history table 7. ordering information order code marking package we ight base qty delivery mode tpdv640rg tpdv640 top3 insulated 4.5 g 30 tube tpdv840rg tpdv840 TPDV1240RG tpdv1240 table 8. document revision history date revision changes 30-mar-2011 1 first issue.
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